Manufacturing method of semiconductor device, including differently spaced bump electrode arrays

ABSTRACT

First bump electrodes are arrayed in a straight line along a first side of a semiconductor chip. Second bump electrodes are more narrowly arrayed in a zigzag arrangement along a second side of the chip. By carrying out an injection of a sealing resin from the second side on which the second bump electrodes are arrayed, a surface of the semiconductor chip that is subjected to face-down mounting on a film substrate is sealed.

RELATED APPLICATIONS

This application claims priority to Japanese Patent Application No.2003-142323 filed May 20, 2003 which is hereby expressly incorporated byreference herein in its entirety.

BACKGROUND

1. Field of the Invention

The present invention relates to a manufacturing method of asemiconductor device and a manufacturing method of an electronic device,especially adequate for resin sealing processes such as COF (Chip OnFilm).

2. Description of the Related Art

As for a conventional semiconductor device, for example, as disclosed inJapanese Unexamined Patent Application Publication No. 2000-269611, amethod that a semiconductor is flip-chip mounted on a film substrate bybonding of a bump electrode on a connecting terminal formed on the filmsubstrate is introduced. As for a method to seal the semiconductor chipthat is flip-chip mounted, a sealing resin is injected into theinterstices between the semiconductor chip and the film substrate.

Along with a miniaturization of circuit patterns, since the bumpelectrode is- arrayed in a fine pitch, a void occurs in the sealingresin injected into the interstices between the semiconductor chip andthe film substrate which deteriorates a sealing performance of thesemiconductor chip.

In view of this, the invention aims to provide a manufacturing method ofa semiconductor device and an electronic device to enable resininjection to be carried out while suppressing a void from occurring.

SUMMARY

In order to solve the above-mentioned problem, a method formanufacturing a semiconductor device of an aspect of the inventionincludes a step of face-down mounting a semiconductor chip on a wiringboard, the semiconductor chip having a plurality of differently spacedbump electrode arrays and a step of carrying out a resin injection froma bump electrode array side of the chip having the most narrow spacing.

Accordingly, it is possible to increase a resin injection pressure atthe narrowest bump electrode array side by changing a resin injectingdirection. Thus, this makes it possible to inject the resin into theinterstices between the semiconductor chip and the wiring board whileenabling the resin to spread around the bump electrodes even if thespacing of the bump electrode array is narrow. Consequently, this makesit possible to suppress an occurrence of a void in a sealing resininjected into the interstices between the semiconductor chip and thewiring board without increasing complex and laborious handling inmanufacturing processes and also to improve a sealing performance of thesemiconductor chip that is subjected to face-down mounting.

Also, a method for manufacturing a semiconductor device of an aspect ofthe invention includes a step of subjecting a semiconductor chip toface-down mounting on a wiring board, the semiconductor chip includingfirst bump electrodes arrayed in a straight line and a second bumpelectrodes arrayed in a zigzag arrangement and a step of carrying out aresin injection from the second bump electrode side of the chip.

This makes it possible to suppress an occurrence of a void in a sealingresin injected into the interstices between the semiconductor chip andthe wiring board by changing a resin injecting direction. As a result,it is possible to improve a sealing performance of the semiconductorchip that is subjected to face-down mounting while enabling a fine pitchto be applied to the bump electrodes.

Also, a method for manufacturing a semiconductor device of an aspect ofthe invention includes a step of face-down mounting a semiconductor chipon a wiring board, the semiconductor chip including a first bumpelectrode array formed at a signal input side and a second bumpelectrode array formed at a signal output side and a step of carryingout a resin injection from the second bump electrode array side.

Accordingly, even if the number of wirings of the signal output side islarger than that of the signal input side, this makes it possible tosuppress an occurrence of a void in a sealing resin injected into theinterstices between the semiconductor chip and the wiring board bychanging a resin injecting direction. As a result, it is possible toimprove a sealing performance of the semiconductor chip that issubjected to face-down mounting without increasing complex and laborioushandling in manufacturing processes.

Also, a method for manufacturing a semiconductor device of an aspect ofthe invention includes a step of face-down mounting a semiconductor chipon a wiring board, the semiconductor chip including at least two sidesalong which a plurality of differently spaced bump electrode arrays aredisposed and a step of carrying out a resin injection from a long sideof the chip on which the bump electrode array having the most narrowspacing is disposed.

Accordingly, it is possible to increase a resin injection pressure atthe narrowest bump electrode array side by changing a resin injectingdirection while enabling a resin flowing channel to be shortened. As aresult, it is possible to suppress an occurrence of a void in thesealing resin injected into the interstices between the semiconductorchip and the wiring board and also to improve a sealing performance ofthe semiconductor chip that is subjected to face-down mounting withoutincreasing complex and laborious handling in manufacturing processes.

Also, a method for manufacturing an electronic device of an aspect ofthe invention includes a step of subjecting an electric component toflip-chip mounting on a wiring board, the electronic component includinga plurality of differently spaced bump electrode arrays are disposed anda step of carrying out a resin injection from the bump electrode arrayside having the most narrow spacing.

Accordingly, it is possible to increase a resin injection pressure atthe narrowest bump electrode array side by changing a resin injectingdirection. Thus, this makes it possible to inject a resin into theinterstices between the electronic component and the wiring board whileenabling the resin to spread around the bump electrodes even if thespacing of the electrodes is narrow. Consequently, this makes itpossible to suppress an occurrence of a void in a sealing resin injectedinto the interstices between the electronic component and the wiringboard without increasing complex and laborious handling in manufacturingprocesses and also to improve a sealing performance of the electroniccomponent that is subjected to flip-chip mounting.

Also, a method for manufacturing an electronic device of an aspect ofthe invention includes a step of subjecting an electronic component toface-down mounting on a wiring board, the electronic component includingfirst bump electrodes arrayed in a straight line and second bumpelectrodes arrayed in a zigzag arrangement and a step of carrying out aresin injection from the second bump electrode side of the chip.

This makes it possible to suppress an occurrence of a void in a sealingresin injected into the interstices between the electronic component andthe wiring board by changing a resin injecting direction. As a result,it is possible to improve a sealing performance of the electroniccomponent that is subjected to flip-chip mounting while enabling a finepitch to be applied to the bump electrodes.

Also, a method for manufacturing an electronic device of an aspect ofthe invention includes a step of flip-chip mounting an electroniccomponent on a wiring board, the electronic component including a firstbump electrode array formed at a signal input side and a second bumpelectrode array formed at a signal output side and a step of carryingout a resin injection from the second bump electrode array side.

Accordingly, even if the number of wirings of the signal output side islarger than that of the signal input side, this makes it possible tosuppress an occurrence of a void in a sealing resin injected into theinterstices between the electronic component and the wiring board bychanging a resin injecting direction. As a result, it is possible toimprove a sealing performance of the electronic component that issubjected to flip-chip mounting without increasing complex and laborioushandling in manufacturing processes.

Also, a method for manufacturing an electronic device of an aspect ofthe invention includes a step of face-down mounting an electroniccomponent on a wiring board, the electronic component including at leasttwo sides along which a plurality of differently spaced bump electrodearrays are disposed and a step of carrying out a resin injection from along side of the chip on which the bump electrode array having the mostnarrow spacing is disposed.

Accordingly, it is possible to increase a resin injection pressure atthe most narrow bump electrode array side by changing a resin injectingdirection while a resin flowing channel is shortened. As a result, it ispossible to suppress an occurrence of a void in a sealing resin injectedinto the interstices between the electronic component and the wiringboard and also to improve a sealing performance of the electroniccomponent that is subjected to flip-chip mounting without increasingcomplex and laborious handling in manufacturing processes.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1( a) and (b) are sectional and plan views showing a method formanufacturing the semiconductor device of a first embodiment of theinvention.

FIG. 2 is a plan view showing a method for manufacturing thesemiconductor device of a second embodiment of the invention.

FIG. 3 is a plan view showing a method for manufacturing thesemiconductor device of a third embodiment of the invention.

FIGS. 4( a) and (b) are diagrams showing a construction of a liquidcrystal module of a fourth embodiment of the invention.

DETAILED DESCRIPTION

The manufacturing method of the semiconductor device according to theinvention will now be described by referring to the accompanyingdrawings.

FIG. 1( a) is a sectional view showing a manufacturing method of asemiconductor device of a first embodiment of the invention. FIG. 1( b)is a plan view showing a flow of a sealing resin 5 on a semiconductorchip 3 shown in FIG. 1( a).

In FIG. 1, a connecting terminal 2 is connected to the wiring portion2′. Bump electrodes 4 a and 4 b are disposed on the semiconductor chip3. The bump electrodes 4 a are arrayed in a straight line along one longside 3 a of the semiconductor chip 3 and the bump electrodes 4 b arearrayed in a zigzag arrangement along the other long side 3 b of thesemiconductor chip 3.

The semiconductor chip 3 is subjected to face-down mounting in which thebump electrodes 4 a and 4 b are connected onto the wiring terminal 2. Asurface of the semiconductor chip 3 is sealed by injecting the sealingresin 5 into the interstices between the semiconductor chip 3 and thefilm substrate 1. Here, it is possible to carry out the injection of thesealing resin 5 from the long side 3 b along which the bump electrodes 4b are arrayed to seal the surface of the semiconductor chip 3.

Accordingly, as compared with the bump electrode 4 a side, the bumpelectrodes 4 a are arrayed in a straight line, it is possible toincrease an injection pressure of the sealing resin 5 at the bumpelectrode 4 b side, the electrodes 4 b being arrayed in a zigzagarrangement. Thus, this makes it possible to seal the surface of thesemiconductor chip 3 while enabling the sealing resin 5 to spread aroundthe bump electrodes 4 b. Therefore, it is possible to suppress anoccurrence of a void in the sealing resin 5 injected into theinterstices between the semiconductor chip 3 and the film substrate 1.As a result, it is possible to improve a sealing performance of thesemiconductor chip 3 that is subjected to face-down mounting whileenabling a fine pitch to be applied to the bump electrodes 4 b.

While a method with the semiconductor chip 3 mounted on the filmsubstrate 1 was introduced in the above-mentioned embodiment, examplesof members on which the semiconductor chip 3 is mounted include aprinted wiring board, a multilayer board, a build up board, a tapesubstrate, a glass substrate and so forth, and are not necessarilylimited to the film substrate 1.

FIG. 2 is a plan view showing a flow of a sealing resin 15 on asemiconductor chip 13 of a second embodiment of the invention.

In FIG. 2, bump electrodes 14 a and 14 b are disposed on thesemiconductor 13. Each bump electrode array 14 a and 14 b isrespectively arranged in a straight line along a long side 13 a or 13 bopposing each other on the semiconductor chip 13. A spacing between thebump electrodes 14 b in the array is narrower than that of the bumpelectrodes 14 a. Here, it is possible to carry out the injection of thesealing resin 15 from the long side 13 b along which the bump electrodes14 b are arrayed to seal the surface of the semiconductor chip 13 thatis subjected to face-down mounting via the bump electrodes 14 a and 14b.

Accordingly, it is possible to increase an injection pressure of thesealing resin 15 at the array side of the bump electrodes 14 b having amore narrow spacing than that of the bump electrodes 14 a by adjustingan injecting direction of the sealing resin 15. Thus, even in a narrowspacing case such as the bump electrodes 14 b, it is possible to sealthe surface of the semiconductor 13 while suppressing the occurrence ofa void in the sealing resin 15. As a result, it is possible to improvethe sealing performance of the semiconductor chip 13 that is subjectedto face-down mounting without increasing complex and laborious handlingin manufacturing processes.

FIG. 3 is a plan view showing a flow of a sealing resin 25 on thesemiconductor chip 23 of a third embodiment of the invention.

In FIG. 3, bump electrodes 24 a and 24 b are disposed on thesemiconductor chip 23. Here, the bump electrodes 24 a are arrayed in astraight line along one long side 23 a of the semiconductor chip 23 andthe bump electrodes 24 b are arrayed in a straight line along the otherlong side 23 b and each short side 23 c and 23 d of the semiconductorchip 23. A spacing between the bump electrodes 24 b in the array isnarrower than that of the bump electrodes 24 a. Here, it is possible tocarry out the injection of the sealing resin 25 from the long side 23 balong which the bump electrodes 24 b are arrayed to seal the surface ofthe semiconductor chip 23 that is subjected to face-down mounting viathe bump electrodes 24 a and 24 b.

Accordingly, it is possible to increase an injection pressure of thesealing resin 25 at the array side of the bump electrodes 24 b having amore narrow spacing than that of the bump electrodes 24 a by changing aninjecting direction of the sealing resin 25 while enabling a flowingchannel of the sealing resin 25 to be shortened. As a result, it ispossible to suppress the occurrence of a void in the sealing resin 25and also to improve the sealing performance of the semiconductor chip 23that is subjected to face-down mounting without increasing complex andlaborious handling in manufacturing processes.

FIG. 4( a) is a cross-sectional view taken along line A—A of FIG. 4( b).FIG. 4( b) is a plan view showing a general structure of a liquidcrystal module of a fourth embodiment of the invention.

In FIG. 4, the liquid crystal module includes a liquid crystal panel PNand a liquid crystal driver DR to drive the liquid crystal panel PN. Thesemiconductor chip 33 in which driving circuits and so forth are formedis built in the liquid crystal driver DR. The semiconductor chip 33 ismounted on a film substrate 31 via bump electrodes 34 and its surface issealed with a sealing resin 35.

The liquid crystal panel PN includes glass substrates 51 and 54. Atransparent electrode 52 such as ITO (Indium Tin Oxide) is formed on theglass substrate 51. A liquid crystal layer 53 is placed between theglass substrate 51 on which the transparent electrode 52 is formed andthe glass substrate 54 and is sealed with a sealing member 55.

A wiring portion for signal input 32 b and a wiring portion for signaloutput 32 a are disposed on the film substrate 31. An outer lead of thewiring portion for signal input 32 b is connected to a printed wiringboard 41 with a connecting terminal 42 such as an ACF (AnisotropicConductive Film). An outer lead of the wiring portion for signal output32 a is connected to the transparent electrode 52 with a connectingterminal 56 such as the ACF.

Each inner lead of the wiring portion for signal input 32 b and thewiring portion for signal output 32 a is connected to the bumpelectrodes 34 of the semiconductor chip 33 respectively. Here, it ispossible to carry out an injection of the sealing resin 35 from thearray side of the bump electrodes 34 a that are connected to the wiringportion for signal output 32 a to seal a surface of the semiconductorchip 33 with the sealing resin 35.

Accordingly, even if the number of wirings of the wiring portion forsignal output 32 a is larger than that of the wiring portion for signalinput 32 b, this makes it possible to suppress the occurrence of a voidin the sealing resin injected into the interstices between thesemiconductor chip 33 and the film substrate 31 by changing an injectingdirection of the sealing resin 35. As a result, it is possible toimprove a sealing performance of the semiconductor chip 33 that issubjected to face-down mounting without increasing complex and laborioushandling in manufacturing processes.

1. A method of manufacturing a device, comprising: providing an electriccomponent including a plurality of bump electrode arrays, said bumpelectrode arrays being disposed along each edge of said electriccomponent, at least one edge of said electric component including a bumpelectrode array formed in a zigzag arrangement, each of the bumpelectrodes of the zigzag arrangement having a pitch that is more narrowthan a pitch of the other bump electrodes of the bump electrode arraysprovided along the other edges of said electric component; face-downmounting the electric component on a wiring board; and carrying outresin injection from the edge of the component on which the bumpelectrode arrays including the more narrow pitch is disposed, whereinthe bump electrodes of the bump electrode array including the morenarrow pitch have a smaller surface area than the bump electrodes of thebump electrode arrays disposed on the other edges of the electriccomponent.
 2. The method of claim 1 wherein the electric componentfurther comprises a semiconductor chip.